The Value of Wafer Bonding
22nd July 2015
If controlling Total Thickness Variation (TTV) is critical to your wafer thinning or polishing process; then it is imperative that the wafer be bonded to a support carrier disc (substrate) to control bond thickness consistency and dimensional accuracy.
The pressure bonding facility built into the new Logitech Wafer Substrate Bonding Unit (WSB) is designed to achieve the best possible results whilst maintaining the highest quality yield. By using vacuum and positive pressure the unit can be confidently used for the process of a variety of materials, including fragile semiconductor wafers such as Silicon and Gallium Arsenide (GaAs). The bonder chamber accepts 4” or 6” diameter by 8mm thick support discs and is compatible for use with a wide variety of bonding adhesives with a maximum heating capacity of 200°C.
The new bonder features a touch screen display enabling the user to easily control the bonding temperature and vacuum required for the specific sample.
This bench-top system is available as a single station or a three station unit for multiple bonding simultaneously.
