What is Silicon Carbide?
Silicon Carbide (SiC) is the chemical compound of both Carbon (C) and Silicon (Si). It can be found in nature as the extremely rare mineral Moissanite.
Silicon Carbide’s characteristics include high thermal conductivity, high resistance towards oxidation, chemical inertness and a high mechanical strength. Making it an ideal material for use in a range of applications. These include biomedical materials, high temperature semiconductor devices, synchrotron optical elements and lightweight, high strength structures. Silicon Carbide possesses superior physical and electronic properties compared to both silicon and gallium arsenide for certain short wavelength optoelectronic, high temperature, radiation resistant and high power applications.
Silicon Carbide Processing
Logitech uses over 50 years of experience and expertise to design and manufacture systems that are widely used to process SiC. In fact it is one of the most commonly processed materials across our range of precision systems.
Achieving precision the precision and surface finish required in hard wafer applications is a skilled job. This is due to the levels of user manual set-up and control needed through the process. Ths laborious process is not conducive to the high levels of throughput demanded in the semiconductor industry. Using Logitech’s automated system we set out to prove that users can ensure accuracy, repeatability and control to confidently deliver optimum surface finish and precise geometric tolerances in the process of Silicon Carbide.
The following results are taken from 100mm/4” SiC substrates processed on the highly automated lapping & polishing system, Akribis-Air.
- Diameter: 4”
- Average Material Removal Rate (MRR): 4-6 μm/min lapping, 4-6 μm/min polishing
- Average TTV: less than ±2 μm
- Average Flatness: less than 2 μm
- Average polished roughness: 1-2 nm